Germanium Nanowires (GeNW): Synthesis, Structural Properties, and Electrical Characterization for Advanced Nanoelectronic Devices

Abstract

The exponential progress of nanoelectronic devices necessitates the development of novel materials and production methodologies to fulfill the escalating demands for enhanced performance. This research aims to answer the current need for high-performance materials by proposing a revolutionary approach known as Germanium Nanowires for Advanced Nanoelectronic Devices (GeNW-ANED). GeNW-ANED achieves the integration of GeNW growth with advanced nanoelectronic applications. The system has several distinctive attributes, such as meticulous regulation of nanowire fabrication, adjustable electrical characteristics, and improved thermal qualities. The GeNW-ANED method exhibits exceptional performance across multiple experimental metrics, encompassing Electrical Conductivity (1.70 S/cm), Carrier Mobility (1685.83 cm²/Vs), Dielectric Constant (4.73), Specific Capacity (325.00 mAh/g), Growth Rate (5.93 nm/s), and Thermal Conductivity (3.47 W/mK). The impressive results achieved by GeNW-ANED establish it as a prospective contender for advanced nanoelectronic devices, offering the potential for improved performance and increased adaptability. The presented approach exhibits promise in influencing the trajectory of nanoelectronics, as it provides a sturdy basis for advancing the creation of forthcoming devices that possess enhanced electrical, thermal, and energy storage properties.